FP1189-G
TRIQUINT SEMICONDUCTOR INC
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionRF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, High Electron Mobility FET, TO-243AA
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeR-PSSO-G3
- ConfigurationSINGLE
- JEDEC-95 CodeTO-243AA
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyHIGH ELECTRON MOBILITY
- J-STD-609 Codee4
- Operating ModeDEPLETION MODE
- Case ConnectionSOURCE
- Terminal FinishNICKEL PALLADIUM GOLD
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Additional FeatureHIGH RELIABILITY
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandS BAND
- Drain Current-Max (ID) (A)0.125
- Moisture Sensitivity Level3
- Transistor Element MaterialSILICON
- Peak Reflow Temperature (Cel)260
- Operating Temperature-Max (Cel)160
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FP1189-G