FLX257XV
Fujitsu Limited
- Lifecycle statusTransferred
- DescriptionRF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.40
- SB Code8541.29.00.40
- JESD-30 CodeR-XUUC-N
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleUNCASED CHIP Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyJUNCTION
- Operating ModeDEPLETION MODE
- DLA QualificationNot Qualified
- Terminal PositionUPPER
- Additional FeatureHIGH RELIABILITY
- Number of Elements1
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandX BAND
- Transistor Element MaterialGALLIUM ARSENIDE
- DS Breakdown Voltage-Min (V)15
- Operating Temperature-Max (Cel)175
- Power Dissipation Ambient-Max (W)15
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FLX257XV