FLR126FH
Fujitsu Limited
- Lifecycle statusDiscontinued
- DescriptionRF Power Field-Effect Transistor, K Band, Gallium Arsenide, N-Channel, Junction FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeS-CQMW-F4
- Package ShapeSQUARE
- Package StyleMICROWAVE Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyJUNCTION
- Operating ModeDEPLETION MODE
- DLA QualificationNot Qualified
- Terminal PositionQUAD
- Number of Terminals4
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandK BAND
- Drain Current-Max (ID) (A)0.072
- Transistor Element MaterialGALLIUM ARSENIDE
- DS Breakdown Voltage-Min (V)8
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FLR126FH
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FLR126FH