FLR026XP
Fujitsu Limited
- Lifecycle statusDiscontinued
- DescriptionRF Small Signal Field-Effect Transistor, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.40
- SB Code8541.29.00.40
- JESD-30 CodeR-XUUC-N6
- Package ShapeRECTANGULAR
- Package StyleUNCASED CHIP Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyHIGH ELECTRON MOBILITY
- Operating ModeDEPLETION MODE
- Terminal PositionUPPER
- Additional FeatureHIGH RELIABILITY
- Number of Terminals6
- Qualification StatusNot Qualified
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandK BAND
- DS Breakdown Voltage-Min8 V
- Operating Temperature-Max175 Cel
- Transistor Element MaterialGALLIUM ARSENIDE
- Power Dissipation Ambient-Max1.88 W
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FLR026XP