FLR016FH
Fujitsu Limited
- Lifecycle statusDiscontinued
- DescriptionRF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, Junction FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- JESD-30 CodeS-MQFP-F4
- ConfigurationSINGLE
- JESD-609 Codee0
- Package ShapeSQUARE
- Package StyleFLATPACK Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyJUNCTION
- Operating ModeDEPLETION MODE
- Case ConnectionSOURCE
- Terminal FinishTin/Lead (Sn/Pb)
- Terminal PositionQUAD
- Additional FeatureHIGH RELIABILITY
- Number of Elements1
- Number of Terminals4
- Qualification StatusNot Qualified
- Package Body MaterialMETAL
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandK BAND
- DS Breakdown Voltage-Min12 V
- Operating Temperature-Max175 Cel
- Transistor Element MaterialGALLIUM ARSENIDE
- Power Dissipation Ambient-Max1 W
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FLR016FH
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FLR016FH