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FLD3F12JL

Fujitsu Limited

Fujitsu Limited FLD3F12JL
  • Mounting Feature
    THROUGH HOLE MOUNT
  • Peak Wavelength (nm)
    1310
  • Semiconductor Material
    GaAs
  • Forward Current-Max (A)
    0.15
  • Forward Voltage-Max (V)
    1.5
  • Optoelectronic Device Type
    LASER DIODE
  • Operating Temperature-Max (Cel)
    85
  • Operating Temperature-Min (Cel)
    -25

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FLD3F12JL
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FLD3F12JL