FLC087XP
Fujitsu Semiconductor America, Inc.
- Lifecycle statusDiscontinued
- DescriptionRF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, P-Channel, High Electron Mobility FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-XUUC-N3
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleUNCASED CHIP Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyHIGH ELECTRON MOBILITY
- Operating ModeDEPLETION MODE
- DLA QualificationNot Qualified
- Terminal PositionUPPER
- Number of Elements1
- Number of Terminals3
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeP-CHANNEL
- Highest Frequency BandC BAND
- Transistor Element MaterialGALLIUM ARSENIDE
- DS Breakdown Voltage-Min (V)15
- Operating Temperature-Max (Cel)175
0 suppliers available to buy or to bid for FLC087XP
Send an RFQ
Send an RFQ Your RFQ will be directly sent to our expert: Pari
Send an RFQ
FLC087XP
Send an RFQ
FLC087XP