Sumitomo Electric Industries, Ltd. FHX35LGT/002
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • FET Technology
    HIGH ELECTRON MOBILITY
  • Operating Mode
    DEPLETION MODE
  • Polarity/Channel Type
    N-CHANNEL
  • DS Breakdown Voltage-Min
    4 V
  • Transistor Element Material
    SILICON
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED

0 suppliers available to buy or to bid for FHX35LGT/002

Send an RFQ

Your RFQ will be directly sent to our expert: Pari

Send an RFQ
FHX35LGT/002
Send an RFQ
FHX35LGT/002