FHX13LG by Fujitsu Semiconductor America, Inc. | Sourcengine

Fujitsu Semiconductor America, Inc. FHX13LG

Lifecycle status
Transferred
Description
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET
Category
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
O-CRDB-F4
Configuration
SINGLE
Package Shape
ROUND
Package Style
DISK BUTTON Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
HIGH ELECTRON MOBILITY
Operating Mode
DEPLETION MODE
DLA Qualification
Not Qualified
Terminal Position
RADIAL
Additional Feature
HIGH RELIABILITY
Number of Elements
1
Number of Terminals
4
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
KU BAND
Power Gain-Min (Gp) (dB)
11
Drain Current-Max (ID) (A)
0.06
Transistor Element Material
GALLIUM ARSENIDE
DS Breakdown Voltage-Min (V)
3.5
Operating Temperature-Max (Cel)
175