FH2164
TYCO ELECTRONICS M/A-COM
- Lifecycle statusTransferred
- DescriptionRF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.75
- SB Code8541.29.00.80
- ApplicationAMPLIFIER
- JESD-30 CodeS-CDFM-F4
- ConfigurationSINGLE
- Package ShapeSQUARE
- Package StyleFLANGE MOUNT Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionSOURCE
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals4
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandVERY HIGH FREQUENCY BAND
- Power Gain-Min (Gp) (dB)13
- Drain Current-Max (ID) (A)4
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)65
- Feedback Cap-Max (Crss) (pF)8
- Operating Temperature-Max (Cel)200
- Power Dissipation Ambient-Max (W)122
0 suppliers available to buy or to bid for FH2164
Send an RFQ
Send an RFQ Your RFQ will be directly sent to our expert: Pari
Send an RFQ
FH2164
Send an RFQ
FH2164