FH2114
TYCO ELECTRONICS M/A-COM
- Lifecycle statusTransferred
- DescriptionRF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.75
- SB Code8541.29.00.80
- JESD-30 CodeR-XDFM-F6
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals6
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandVERY HIGH FREQUENCY BAND
- Power Gain-Min (Gp) (dB)13
- Drain Current-Max (ID) (A)16
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)65
- Feedback Cap-Max (Crss) (pF)25
- Operating Temperature-Max (Cel)200
- Power Dissipation Ambient-Max (W)159
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FH2114