FGD3N60LSDTM-SB82154
FAIRCHILD SEMICONDUCTOR CORP
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- DescriptionInsulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-609 Codee3
- Surface MountYES
- Terminal FinishMATTE TIN
- Polarity/Channel TypeN-CHANNEL
- Gate-emitter Voltage-Max25 V
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)6 A
- Moisture Sensitivity Level1
- Power Dissipation-Max (Abs)40 W
- Gate-emitter Thr Voltage-Max5 V
- Collector-emitter Voltage-Max600 V
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
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FGD3N60LSDTM-SB82154