FDW2508P_NL
FAIRCHILD SEMICONDUCTOR CORP
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 6A I(D), 12V, 0.018ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PDSO-G8
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee3
- Operating ModeENHANCEMENT MODE
- Terminal FinishMATTE TIN
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Number of Elements2
- Number of Terminals8
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeP-CHANNEL
- Power Dissipation-Max (W)1
- Drain Current-Max (ID) (A)6
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)12
- Operating Temperature-Max (Cel)150
- Drain-source On Resistance-Max (ohm)0.018
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