FDT461N
FAIRCHILD SEMICONDUCTOR CORP
- Lifecycle statusEOL
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionMOSFET N-CH 100V 540MA SOT223-4
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PDSO-G4
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JESD-609 Codee3
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal FinishMATTE TIN
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals4
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)0.54 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min100 V
- Operating Temperature-Max150 Cel
- Moisture Sensitivity Level1
- Power Dissipation-Max (Abs)1.13 W
- Transistor Element MaterialSILICON
- Avalanche Energy Rating (Eas)6.3 mJ
- Drain-source On Resistance-Max2 ohm
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FDT461N