FDP55N06
FAIRCHILD SEMICONDUCTOR CORP
- Lifecycle statusEOL
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionMOSFET SINGLE N-CH 60V ULTRAFET TRENCH
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- ApplicationSWITCHING
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-220AB
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee3
- Operating ModeENHANCEMENT MODE
- Terminal FinishMATTE TIN
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Additional FeatureAVALANCHE RATED
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)114
- Drain Current-Max (ID) (A)55
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)60
- Operating Temperature-Max (Cel)150
- Avalanche Energy Rating (Eas) (mJ)480
- Pulsed Drain Current-Max (IDM) (A)220
- Drain-source On Resistance-Max (ohm)0.022
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FDP55N06