FDP3652
FAIRCHILD SEMICONDUCTOR CORP
- Lifecycle statusActive
- REACHREACH compliant
- DescriptionPOWER FIELD-EFFECT TRANSISTOR, 9
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- ApplicationSWITCHING
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-220AB
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee3
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal FinishMATTE TIN
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)150
- Drain Current-Max (ID) (A)9
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)100
- Operating Temperature-Max (Cel)175
- Avalanche Energy Rating (Eas) (mJ)182
- Drain-source On Resistance-Max (ohm)0.016
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FDP3652