Compliance Details

  • SB Code
    8541.29.00.80
  • HTS Code
    8541.29.00.95
  • ECCN Governance
    EAR
  • ECCN
    EAR99
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Technical Details

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  • JESD-30 Code
    S-PDSO-N5
  • Sub Category
    FET General Purpose Powers
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • JESD-609 Code
    e4
  • Package Shape
    SQUARE
  • Package Style
    SMALL OUTLINE Meter
  • Surface Mount
    YES
  • Terminal Form
    NO LEAD
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Terminal Finish
    Nickel/Palladium/Gold (Ni/Pd/Au)
  • Terminal Position
    DUAL
  • Number of Elements
    1
  • Number of Terminals
    5
  • Qualification Status
    Not Qualified
  • Package Body Material
    PLASTIC/EPOXY
  • Polarity/Channel Type
    N-CHANNEL
  • Drain Current-Max (ID)
    2.8 A
  • Transistor Application
    SWITCHING
  • DS Breakdown Voltage-Min
    150 V
  • Operating Temperature-Max
    150 Cel
  • Moisture Sensitivity Level
    1
  • Power Dissipation-Max (Abs)
    26 W
  • Transistor Element Material
    SILICON
  • Drain Current-Max (Abs) (ID)
    15 A
  • Avalanche Energy Rating (Eas)
    12 mJ
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Drain-source On Resistance-Max
    0.134 ohm
  • Pulsed Drain Current-Max (IDM)
    12 A
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
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