FDG6301N_F085 by FAIRCHILD SEMICONDUCTOR CORP | Sourcengine

FAIRCHILD SEMICONDUCTOR CORP FDG6301N_F085

Lifecycle status
Transferred
RoHS
RoHS compliant
REACH
REACH compliant
Description
Small Signal Field-Effect Transistor, 0.22A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Category
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.21.00.95
SB Code
8541.21.00.80

Application
SWITCHING
JESD-30 Code
R-PDSO-G6
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Terminal Finish
MATTE TIN
DLA Qualification
Not Qualified
Terminal Position
DUAL
Additional Feature
LOGIC LEVEL COMPATIBLE
Number of Elements
2
Number of Terminals
6
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
0.3
Drain Current-Max (ID) (A)
0.22
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
25
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
150
Drain-source On Resistance-Max (ohm)
4
Time@Peak Reflow Temperature-Max (s)
30