FDD5N50UTM_WS by FAIRCHILD SEMICONDUCTOR CORP | Sourcengine

FAIRCHILD SEMICONDUCTOR CORP FDD5N50UTM_WS

Lifecycle status
Transferred
RoHS
RoHS compliant
Description
Power Field-Effect Transistor, 3A I(D), 500V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

Application
SWITCHING
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-252AA
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
MATTE TIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
40
Drain Current-Max (ID) (A)
3
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
500
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
150
Avalanche Energy Rating (Eas) (mJ)
275
Pulsed Drain Current-Max (IDM) (A)
12
Drain-source On Resistance-Max (ohm)
2
Time@Peak Reflow Temperature-Max (s)
30