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F50D4G41XB-83RAG2XE

ELITE SEMICONDUCTOR MICROELECTRONICS TECHNOLOGY INC

ELITE SEMICONDUCTOR MICROELECTRONICS TECHNOLOGY INC F50D4G41XB-83RAG2XE
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.51
  • SB Code
    8542.32.00.50
  • Type
    SLC NAND TYPE
  • Technology
    CMOS
  • Width (mm)
    6
  • Length (mm)
    8
  • JESD-30 Code
    R-XDSO-N8
  • Memory Width
    1
  • Package Code
    HVSON
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE Meter
  • Surface Mount
    YES
  • Terminal Form
    NO LEAD
  • Memory IC Type
    FLASH
  • Operating Mode
    SYNCHRONOUS
  • Parallel/Serial
    SERIAL
  • Serial Bus Type
    SPI
  • Write Protection
    HARDWARE
  • Terminal Position
    DUAL
  • Memory Organization
    4GX1
  • Number of Functions
    1
  • Number of Terminals
    8
  • Terminal Pitch (mm)
    1.27
  • Number of Words Code
    4G
  • Memory Density (bits)
    4294967296
  • Package Body Material
    UNSPECIFIED
  • Output Characteristics
    3-STATE
  • Seated Height-Max (mm)
    0.8
  • Supply Voltage-Max (V)
    1.95
  • Supply Voltage-Min (V)
    1.7
  • Supply Voltage-Nom (V)
    1.8
  • Data Retention Time-Min
    10
  • Number of Words (words)
    4294967296
  • Programming Voltage (V)
    1.8
  • Standby Current-Max (A)
    5.0E-5
  • Supply Current-Max (mA)
    25
  • Package Equivalence Code
    SOLCC8,.3
  • Clock Frequency-Max (MHz)
    83
  • Endurance (Write/Erase Cycles)
    100000
  • Operating Temperature-Max (Cel)
    70
  • Operating Temperature-Min (Cel)
    0

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F50D4G41XB-83RAG2XE