- Lifecycle statusDiscontinued
- DescriptionPower Field-Effect Transistor, 3A I(D), 900V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE
- JEDEC-95 CodeTO-220AB
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)3 A
- Transistor ApplicationSWITCHING
- Turn-on Time-Max (ton)90 ns
- DS Breakdown Voltage-Min900 V
- Turn-off Time-Max (toff)220 ns
- Operating Temperature-Max150 Cel
- Transistor Element MaterialSILICON
- Power Dissipation Ambient-Max50 W
- Drain-source On Resistance-Max5 ohm
- Pulsed Drain Current-Max (IDM)6 A
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