F2H3ND by SHINDENGEN ELECTRIC MANUFACTURING CO., LTD. | Sourcengine

SHINDENGEN ELECTRIC MANUFACTURING CO., LTD. F2H3ND

Lifecycle status
Discontinued
Description
Power Field-Effect Transistor, 2.5A I(D), 30V, 0.25ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G8
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e0
Operating Mode
DUAL GATE, ENHANCEMENT MODE
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
2
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
0.75
Drain Current-Max (ID) (A)
2.5
Moisture Sensitivity Level
2
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
30
Peak Reflow Temperature (Cel)
240
Operating Temperature-Max (Cel)
150
Drain-source On Resistance-Max (ohm)
0.25