F2001
ASI Semiconductor, Inc.
- Lifecycle statusActive
- DescriptionPower Field-Effect Transistor, 0.8A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ConfigurationSINGLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Elements1
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)0.8 A
- Operating Temperature-Max200 Cel
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F2001
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F2001