EPC7019GC
MICROSS COMPONENTS
- Lifecycle statusActive
- DescriptionPower Field-Effect Transistor, 80A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Gallium Nitride, High Electron Mobility FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-XBCC-N5
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleCHIP CARRIER Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyHIGH ELECTRON MOBILITY
- Operating ModeDEPLETION MODE
- Case ConnectionDRAIN SOURCE
- Terminal PositionBOTTOM
- Additional FeatureHIGH RELIABILITY
- Number of Elements1
- Number of Terminals5
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)80
- Transistor Element MaterialGALLIUM NITRIDE
- DS Breakdown Voltage-Min (V)40
- Feedback Cap-Max (Crss) (pF)35
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-55
- Pulsed Drain Current-Max (IDM) (A)530
- Drain-source On Resistance-Max (ohm)0.004
- Screening Level / Reference StandardMIL-STD-750
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EPC7019GC
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EPC7019GC