EPC2110ENGR
EFFICIENT POWER CONVERSION CORP
- Lifecycle statusContact Mfr
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 3.4A I(D), 120V, 0.06ohm, 2-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeS-XXUC-B9
- ConfigurationCOMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE
- Package ShapeSQUARE
- Package StyleUNCASED CHIP Meter
- Surface MountYES
- Terminal FormBALL
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionUNSPECIFIED
- Number of Elements2
- Number of Terminals9
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)3.4 A
- Transistor ApplicationSWITCHING
- Feedback Cap-Max (Crss)0.75 pF
- DS Breakdown Voltage-Min120 V
- Operating Temperature-Max150 Cel
- Operating Temperature-Min-40 Cel
- Transistor Element MaterialGALLIUM NITRIDE
- Drain-source On Resistance-Max0.06 ohm
- Pulsed Drain Current-Max (IDM)20 A
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EPC2110ENGR