EPC2104ENGR
EFFICIENT POWER CONVERSION CORP
- Lifecycle statusContact Mfr
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 23A I(D), 100V, 0.0063ohm, 2-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-XXUC-X75
- ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleUNCASED CHIP Meter
- Surface MountYES
- Terminal FormUNSPECIFIED
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionUNSPECIFIED
- Number of Elements2
- Number of Terminals75
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)23
- Transistor Element MaterialGALLIUM NITRIDE
- DS Breakdown Voltage-Min (V)100
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Pulsed Drain Current-Max (IDM) (A)165
- Drain-source On Resistance-Max (ohm)0.0063
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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