EPC2065
EFFICIENT POWER CONVERSION CORP
- Lifecycle statusContact Mfr
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 60A I(D), 80V, 0.0036ohm, 1-Element, N-Channel, Gallium Nitride, High Electron Mobility FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-XUUC-N8
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleUNCASED CHIP Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyHIGH ELECTRON MOBILITY
- Operating ModeENHANCEMENT MODE
- Terminal PositionUPPER
- Number of Elements1
- Number of Terminals8
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)60 A
- Transistor ApplicationSWITCHING
- Feedback Cap-Max (Crss)8.9 pF
- DS Breakdown Voltage-Min80 V
- Operating Temperature-Max150 Cel
- Operating Temperature-Min-40 Cel
- Moisture Sensitivity Level1
- Transistor Element MaterialGALLIUM NITRIDE
- Drain-source On Resistance-Max0.0036 ohm
- Pulsed Drain Current-Max (IDM)215 A
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EPC2065