EPA120E-CP083
EXCELICS SEMICONDUCTOR INC
- Lifecycle statusDiscontinued
- DescriptionRF Power Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-CDSO-G2
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyHETERO-JUNCTION
- Operating ModeDEPLETION MODE
- Case ConnectionSOURCE
- Terminal PositionDUAL
- Additional FeatureHIGH RELIABILITY
- Number of Elements1
- Number of Terminals2
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandKU BAND
- Drain Current-Max (ID) (A)0.405
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)8
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EPA120E-CP083
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EPA120E-CP083