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EMB9T2R

ROHM Semiconductor

EMB9T2R Datasheet
ROHM Semiconductor EMB9T2R
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • Application
    SWITCHING
  • JESD-30 Code
    R-PDSO-F6
  • Configuration
    SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE Meter
  • Surface Mount
    YES
  • Terminal Form
    FLAT
  • DLA Qualification
    Not Qualified
  • Terminal Position
    DUAL
  • Additional Feature
    BUILT-IN BIAS RESISTOR RATIO IS 4.7
  • Number of Elements
    2
  • Number of Terminals
    6
  • Package Body Material
    PLASTIC/EPOXY
  • Polarity/Channel Type
    PNP
  • DC Current Gain-Min (hFE)
    68
  • Power Dissipation-Max (W)
    0.15
  • Moisture Sensitivity Level
    1
  • Transistor Element Material
    SILICON
  • Peak Reflow Temperature (Cel)
    260
  • Collector Current-Max (IC) (A)
    0.07
  • Operating Temperature-Max (Cel)
    150
  • Collector-emitter Voltage-Max (V)
    50
  • Transition Frequency-Nom (fT) (MHz)
    250
  • Time@Peak Reflow Temperature-Max (s)
    10

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EMB9T2R