ELM6472-4PST by Sumitomo Electric Industries, Ltd. | Sourcengine

Sumitomo Electric Industries, Ltd. ELM6472-4PST

Lifecycle status
Active
RoHS
RoHS compliant
Description
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET
Category
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-PDSO-G6
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
JUNCTION
Operating Mode
DEPLETION MODE
Case Connection
SOURCE
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
6
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
C BAND
Drain Current-Max (ID) (A)
1.3
Moisture Sensitivity Level
2A
Transistor Element Material
GALLIUM ARSENIDE
DS Breakdown Voltage-Min (V)
15
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40