ELM14800AA-N
ELM TECHNOLOGY CORP
- Lifecycle statusContact Mfr
- DescriptionPower Field-Effect Transistor, 6.9A I(D), 30V, 0.027ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PDSO-G8
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionDUAL
- Number of Elements2
- Number of Terminals8
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)6.9 A
- DS Breakdown Voltage-Min30 V
- Transistor Element MaterialSILICON
- Drain-source On Resistance-Max0.027 ohm
- Pulsed Drain Current-Max (IDM)40 A
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ELM14800AA-N