EFMT513M159
GENTRON CORP
- Lifecycle statusTransferred
- DescriptionInsulated Gate Bipolar Transistor, 18A I(C), 500V V(BR)CES
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- VCEsat-Max2.4 V
- Number of Elements1
- Gate-emitter Voltage-Max25 V
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)18 A
- Power Dissipation-Max (Abs)300 W
- Collector-emitter Voltage-Max500 V
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EFMT513M159
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EFMT513M159