EDJ1116DBSE-AG-F
Micron Technology
- Lifecycle statusActive
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionDDR3 DRAM, 64MX16, 20ns, CMOS, PBGA96
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.32
- SB Code8542.32.00.15
- I/O TypeCOMMON
- TechnologyCMOS
- Width (mm)8
- Access ModeMULTI BANK PAGE BURST
- Length (mm)13.5
- JESD-30 CodeR-PBGA-B96
- Memory Width16
- Package CodeTFBGA
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, THIN PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory IC TypeDDR3 DRAM
- Operating ModeSYNCHRONOUS
- Number of Ports1
- Terminal PositionBOTTOM
- Additional FeatureAUTO/SELF REFRESH
- Memory Organization64MX16
- Number of Functions1
- Number of Terminals96
- Terminal Pitch (mm)0.8
- Access Time-Max (ns)20
- Number of Words Code64M
- Memory Density (bits)1073741824
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Seated Height-Max (mm)1.17
- Supply Voltage-Max (V)1.575
- Supply Voltage-Min (V)1.425
- Supply Voltage-Nom (V)1.5
- Number of Words (words)67108864
- Sequential Burst Length8
- Standby Current-Max (A)0.065
- Supply Current-Max (mA)270
- Interleaved Burst Length8
- Package Equivalence CodeBGA96,9X16,32
- Clock Frequency-Max (MHz)533
- Operating Temperature-Max (Cel)95
- Operating Temperature-Min (Cel)0
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EDJ1116DBSE-AG-F