EDE5116AHBG-6C-E
Micron Technology
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- DescriptionDDR2 DRAM, 32MX16, 0.45ns, CMOS, PBGA84
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.28
- SB Code8542.32.00.15
- I/O TypeCOMMON
- TechnologyCMOS
- JESD-30 CodeR-PBGA-B84
- Memory Width16
- Organization32MX16
- Package CodeFBGA
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density536870912 bit
- Memory IC TypeDDR2 DRAM
- Refresh Cycles8192
- Terminal Pitch0.8 mm
- Access Time-Max0.45 ns
- Number of Words33554432 words
- Terminal PositionBOTTOM
- Supply Current-Max240 mA
- Number of Terminals84
- Standby Current-Max0.01 Amp
- Number of Words Code32M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Sequential Burst Length4,8
- Interleaved Burst Length4,8
- Package Equivalence CodeBGA84,9X15,32
- Supply Voltage-Nom (Vsup)1.8 V
- Clock Frequency-Max (fCLK)333 MHz
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EDE5116AHBG-6C-E