EDE4232A2MA-8E-F
ELPIDA MEMORY INC
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- DescriptionDDR2 DRAM, 128MX32, 0.4ns, CMOS, PBGA128
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.36
- SB Code8542.32.00.23
- Width10.5 mm
- Length13.5 mm
- I/O TypeCOMMON
- TechnologyCMOS
- Access ModeMULTI BANK PAGE BURST
- JESD-30 CodeR-PBGA-B128
- Memory Width32
- Organization128MX32
- Package CodeLFBGA
- Self RefreshYES
- JESD-609 Codee1
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, LOW PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density4294967296 bit
- Memory IC TypeDDR2 DRAM
- Operating ModeSYNCHRONOUS
- Refresh Cycles8192
- Terminal Pitch0.8 mm
- Access Time-Max0.4 ns
- Number of Ports1
- Number of Words134217728 words
- Seated Height-Max1.35 mm
- Temperature GradeOTHER
- Terminal PositionBOTTOM
- Additional FeatureAUTO/SELF REFRESH
- Supply Current-Max420 mA
- Number of Functions1
- Number of Terminals128
- Standby Current-Max0.024 Amp
- Number of Words Code128M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Sequential Burst Length4,8
- Interleaved Burst Length4,8
- Package Equivalence CodeBGA128,12X16,32
- Operating Temperature-Max85 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Max (Vsup)1.9 V
- Supply Voltage-Min (Vsup)1.7 V
- Supply Voltage-Nom (Vsup)1.8 V
- Clock Frequency-Max (fCLK)400 MHz
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
0 suppliers available to buy or to bid for EDE4232A2MA-8E-F
Send an RFQ
Your RFQ will be directly sent to our expert: Pari
Send an RFQ
EDE4232A2MA-8E-F