EDE2508AASE-6E-E
ELPIDA MEMORY INC
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- DescriptionDDR2 DRAM, 32MX8, 0.45ns, CMOS, PBGA64
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.24
- SB Code8542.32.00.15
- Width11.3 mm
- Length13.8 mm
- TechnologyCMOS
- Access ModeFOUR BANK PAGE BURST
- JESD-30 CodeR-PBGA-B64
- Memory Width8
- Organization32MX8
- Package CodeTFBGA
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, THIN PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density268435456 bit
- Memory IC TypeDDR2 DRAM
- Operating ModeSYNCHRONOUS
- Terminal Pitch0.8 mm
- Access Time-Max0.45 ns
- Number of Ports1
- Number of Words33554432 words
- Seated Height-Max1.12 mm
- Temperature GradeOTHER
- Terminal PositionBOTTOM
- Additional FeatureAUTO/SELF REFRESH
- Number of Functions1
- Number of Terminals64
- Number of Words Code32M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Operating Temperature-Max85 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Max (Vsup)1.9 V
- Supply Voltage-Min (Vsup)1.7 V
- Supply Voltage-Nom (Vsup)1.8 V
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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EDE2508AASE-6E-E