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EDB1332BDBH-1DAUT-F-R

Micron Technology

EDB1332BDBH-1DAUT-F-R Datasheet
Micron Technology EDB1332BDBH-1DAUT-F-R
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.32
  • SB Code
    8542.32.00.15
  • I/O Type
    COMMON
  • Technology
    CMOS
  • Width (mm)
    10
  • Access Mode
    MULTI BANK PAGE BURST
  • Length (mm)
    11.5
  • JESD-30 Code
    R-PBGA-B134
  • Memory Width
    32
  • Package Code
    VFBGA
  • Self Refresh
    YES
  • Package Shape
    RECTANGULAR
  • Package Style
    GRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
  • Surface Mount
    YES
  • Terminal Form
    BALL
  • Memory IC Type
    LPDDR2 DRAM
  • Operating Mode
    SYNCHRONOUS
  • Refresh Cycles
    8192
  • Number of Ports
    1
  • Temperature Grade
    AUTOMOTIVE
  • Terminal Position
    BOTTOM
  • Memory Organization
    32MX32
  • Number of Functions
    1
  • Number of Terminals
    134
  • Terminal Pitch (mm)
    0.65
  • Number of Words Code
    32M
  • Memory Density (bits)
    1073741824
  • Package Body Material
    PLASTIC/EPOXY
  • Output Characteristics
    3-STATE
  • Seated Height-Max (mm)
    1
  • Supply Voltage-Max (V)
    1.3
  • Supply Voltage-Min (V)
    1.14
  • Supply Voltage-Nom (V)
    1.2
  • Number of Words (words)
    33554432
  • Sequential Burst Length
    4,8,16
  • Interleaved Burst Length
    4,8,16
  • Package Equivalence Code
    BGA134,9X17,25
  • Clock Frequency-Max (MHz)
    533
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Operating Temperature-Max (Cel)
    125
  • Operating Temperature-Min (Cel)
    -40
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED

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EDB1332BDBH-1DAUT-F-R