EBR51UC8ABFD-AE
ELPIDA MEMORY INC
- Lifecycle statusDiscontinued
- DescriptionRambus DRAM Module, 256MX16, 32ns, CMOS
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.36
- SB Code8542.32.00.23
- I/O TypeCOMMON
- TechnologyCMOS
- Access ModeBLOCK ORIENTED PROTOCOL
- JESD-30 CodeR-XDMA-N184
- Memory Width16
- Package CodeDIMM
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleMICROELECTRONIC ASSEMBLY Meter
- Surface MountNO
- Terminal FormNO LEAD
- Memory IC TypeRAMBUS DRAM MODULE
- Operating ModeSYNCHRONOUS
- Number of Ports1
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Additional FeatureSELF CONTAINED REFRESH
- Memory Organization256MX16
- Number of Functions1
- Number of Terminals184
- Terminal Pitch (mm)1
- Access Time-Max (ns)32
- Number of Words Code256M
- Memory Density (bits)4294967296
- Package Body MaterialUNSPECIFIED
- Output Characteristics3-STATE
- Supply Voltage-Max (V)2.63
- Supply Voltage-Min (V)2.37
- Supply Voltage-Nom (V)2.5
- Number of Words (words)268435456
- Package Equivalence CodeDIMM184,40
- Clock Frequency-Max (MHz)1066
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EBR51UC8ABFD-AE