EBR51EC8ABKD-AEP
ELPIDA MEMORY INC
- Lifecycle statusTransferred
- DescriptionRambus DRAM Module, 256MX18, 32ns, CMOS, PDMA232
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.36
- SB Code8542.32.00.23
- I/O TypeCOMMON
- TechnologyCMOS
- JESD-30 CodeR-PDMA-N232
- Memory Width18
- Package CodeDIMM
- Package ShapeRECTANGULAR
- Package StyleMICROELECTRONIC ASSEMBLY Meter
- Surface MountNO
- Terminal FormNO LEAD
- Memory IC TypeRAMBUS DRAM MODULE
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Memory Organization256MX18
- Number of Terminals232
- Terminal Pitch (mm)1
- Access Time-Max (ns)32
- Number of Words Code256M
- Memory Density (bits)4831838208
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Number of Words (words)268435456
- Package Equivalence CodeDIMM232,40
- Clock Frequency-Max (MHz)1066
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EBR51EC8ABKD-AEP