EBR51EC8ABKD-AE
Micron Technology
- Lifecycle statusDiscontinued
- DescriptionRambus DRAM Module, 256MX18, 32ns, CMOS, PDMA232
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.36
- SB Code8542.32.00.23
- I/O TypeCOMMON
- TechnologyCMOS
- JESD-30 CodeR-PDMA-N232
- Memory Width18
- Organization256MX18
- Package CodeDIMM
- Package ShapeRECTANGULAR
- Package StyleMICROELECTRONIC ASSEMBLY Meter
- Surface MountNO
- Terminal FormNO LEAD
- Memory Density4831838208 bit
- Memory IC TypeRAMBUS DRAM MODULE
- Terminal Pitch1 mm
- Access Time-Max32 ns
- Number of Words268435456 words
- Terminal PositionDUAL
- Number of Terminals232
- Number of Words Code256M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Package Equivalence CodeDIMM232,40
- Clock Frequency-Max (fCLK)1066 MHz
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