EBJ20UF8BCS0-GN-F
ELPIDA MEMORY INC
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- DescriptionDDR DRAM Module, 256MX64, 0.225ns, CMOS
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.36
- SB Code8542.32.00.23
- I/O TypeCOMMON
- TechnologyCMOS
- Access ModeSINGLE BANK PAGE BURST
- Length (mm)67.6
- JESD-30 CodeR-XDMA-N204
- Memory Width64
- Package CodeDIMM
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleMICROELECTRONIC ASSEMBLY Meter
- Surface MountNO
- Terminal FormNO LEAD
- J-STD-609 Codee4
- Memory IC TypeDDR DRAM MODULE
- Operating ModeSYNCHRONOUS
- Refresh Cycles8192
- Number of Ports1
- DLA QualificationNot Qualified
- Temperature GradeOTHER
- Terminal PositionDUAL
- Additional FeatureAUTO/SELF REFRESH
- Memory Organization256MX64
- Number of Functions1
- Number of Terminals204
- Terminal Pitch (mm)0.6
- Access Time-Max (ns)0.225
- Number of Words Code256M
- Memory Density (bits)17179869184
- Package Body MaterialUNSPECIFIED
- Output Characteristics3-STATE
- Supply Voltage-Max (V)1.575
- Supply Voltage-Min (V)1.425
- Supply Voltage-Nom (V)1.5
- Number of Words (words)268435456
- Standby Current-Max (A)0.12
- Supply Current-Max (mA)2080
- Package Equivalence CodeDIMM204,24
- Clock Frequency-Max (MHz)800
- Operating Temperature-Max (Cel)85
- Operating Temperature-Min (Cel)0
0 suppliers available to buy or to bid for EBJ20UF8BCS0-GN-F
Send an RFQ
Your RFQ will be directly sent to our expert: Pari
Send an RFQ
EBJ20UF8BCS0-GN-F