EBJ11UE6BAU0-AE-F
Micron Technology
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- DescriptionDDR DRAM Module, 128MX64, CMOS, PDMA204
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.36
- SB Code8542.32.00.23
- I/O TypeCOMMON
- TechnologyCMOS
- JESD-30 CodeR-PDMA-N204
- Memory Width64
- Organization128MX64
- Package CodeDIMM
- Package ShapeRECTANGULAR
- Package StyleMICROELECTRONIC ASSEMBLY Meter
- Surface MountNO
- Terminal FormNO LEAD
- Memory Density8589934592 bit
- Memory IC TypeDDR DRAM MODULE
- Refresh Cycles8192
- Terminal Pitch0.6 mm
- Number of Words134217728 words
- Temperature GradeOTHER
- Terminal PositionDUAL
- Supply Current-Max1660 mA
- Number of Terminals204
- Standby Current-Max0.104 Amp
- Number of Words Code128M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Package Equivalence CodeDIMM204,24
- Operating Temperature-Max85 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Nom (Vsup)1.5 V
- Clock Frequency-Max (fCLK)533 MHz
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EBJ11UE6BAU0-AE-F