DU1215S
TYCO ELECTRONICS M/A-COM
- Lifecycle statusTransferred
- DescriptionRF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.75
- SB Code8541.29.00.80
- ApplicationAMPLIFIER
- JESD-30 CodeO-CRFM-F4
- ConfigurationSINGLE
- Package ShapeROUND
- Package StyleFLANGE MOUNT Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- DLA QualificationNot Qualified
- Terminal PositionRADIAL
- Number of Elements1
- Number of Terminals4
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandVERY HIGH FREQUENCY BAND
- Power Gain-Min (Gp) (dB)9.5
- Drain Current-Max (ID) (A)4
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)40
- Feedback Cap-Max (Crss) (pF)12
- Operating Temperature-Max (Cel)200
- Power Dissipation Ambient-Max (W)87.5
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DU1215S
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DU1215S