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DTC115EU3HZGT106

ROHM Semiconductor

ROHM Semiconductor DTC115EU3HZGT106
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • Application
    SWITCHING
  • JESD-30 Code
    R-PDSO-G3
  • Configuration
    SINGLE WITH BUILT-IN RESISTOR
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE Meter
  • Surface Mount
    YES
  • Terminal Form
    GULL WING
  • Terminal Position
    DUAL
  • Additional Feature
    BUILT IN BIAS RESISTOR RATIO IS 1.0
  • Number of Elements
    1
  • Number of Terminals
    3
  • Package Body Material
    PLASTIC/EPOXY
  • Polarity/Channel Type
    NPN
  • DC Current Gain-Min (hFE)
    82
  • Power Dissipation-Max (W)
    0.2
  • Moisture Sensitivity Level
    1
  • Transistor Element Material
    SILICON
  • Peak Reflow Temperature (Cel)
    260
  • Collector Current-Max (IC) (A)
    0.1
  • Operating Temperature-Max (Cel)
    150
  • Transition Frequency-Nom (fT) (MHz)
    250
  • Screening Level / Reference Standard
    AEC-Q101
  • Time@Peak Reflow Temperature-Max (s)
    30

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DTC115EU3HZGT106
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DTC115EU3HZGT106