DPS256S8N-10M by TWILIGHT TECHNOLOGY INC | Sourcengine

TWILIGHT TECHNOLOGY INC DPS256S8N-10M

Lifecycle status
Contact Mfr
Description
SRAM Module, 256KX8, 100ns, CMOS, CDMA32
Category
Semiconductors Memory ICs SRAMs SRAM MODULE

ECCN
3A991.b.2.a
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
R-CDMA-T32
Memory Width
8
Package Code
DIP
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Memory IC Type
SRAM MODULE
Operating Mode
ASYNCHRONOUS
Parallel/Serial
PARALLEL
DLA Qualification
Not Qualified
Temperature Grade
MILITARY
Terminal Position
DUAL
Memory Organization
256KX8
Number of Functions
1
Number of Terminals
32
Terminal Pitch (mm)
2.54
Access Time-Max (ns)
100
Number of Words Code
256K
Memory Density (bits)
2097152
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Output Characteristics
3-STATE
Supply Voltage-Max (V)
5.5
Supply Voltage-Min (V)
4.5
Supply Voltage-Nom (V)
5
Number of Words (words)
262144
Standby Current-Max (A)
9.0E-5
Standby Voltage-Min (V)
2
Supply Current-Max (mA)
110
Package Equivalence Code
DIP32,.6
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Operating Temperature-Max (Cel)
125
Operating Temperature-Min (Cel)
-55
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED