DN3765K4-G
Supertex, Inc.
- Lifecycle statusTransferred
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 0.3A I(D), 650V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.90.00.00
- SB Code8541.90.00.00
- ApplicationSWITCHING
- JESD-30 CodeR-PSSO-G2
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-252
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee3
- Operating ModeDEPLETION MODE
- Case ConnectionDRAIN
- Terminal FinishMATTE TIN
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals2
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)0.3
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)650
- Pulsed Drain Current-Max (IDM) (A)0.5
- Drain-source On Resistance-Max (ohm)8
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DN3765K4-G