DN2625K6-G
Supertex, Inc.
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 1.1A I(D), 250V, 3.5ohm, 3-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeS-PQCC-N14
- Package ShapeSQUARE
- Package StyleCHIP CARRIER Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee3
- Operating ModeDEPLETION MODE
- Case ConnectionDRAIN
- Terminal FinishMATTE TIN
- DLA QualificationNot Qualified
- Terminal PositionQUAD
- Additional FeatureLOW THRESHOLD
- Number of Elements3
- Number of Terminals14
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)1.1
- Moisture Sensitivity Level3
- Transistor Element MaterialSILICON
- Turn-on Time-Max (ton) (ns)30
- DS Breakdown Voltage-Min (V)250
- Feedback Cap-Max (Crss) (pF)70
- Turn-off Time-Max (toff) (ns)30
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-55
- Pulsed Drain Current-Max (IDM) (A)3.3
- Drain-source On Resistance-Max (ohm)3.5
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DN2625K6-G