DMWSH120H28SM4
Diodes Incorporated
- Lifecycle statusActive
- RoHSRoHS compliant
- DescriptionN-Channel Silicon Carbide Power MOSFETs
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PSFM-T4
- ConfigurationSINGLE WITH BUILT-IN DIODE AND KELVIN SENSOR
- JEDEC-95 CodeTO-247
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals4
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)429
- Drain Current-Max (ID) (A)100
- Transistor Element MaterialSILICON CARBIDE
- DS Breakdown Voltage-Min (V)1200
- Feedback Cap-Max (Crss) (pF)9.73
- Operating Temperature-Max (Cel)175
- Operating Temperature-Min (Cel)-55
- Pulsed Drain Current-Max (IDM) (A)430
- Drain-source On Resistance-Max (ohm)0.0285
- Screening Level / Reference StandardMIL-STD-202
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DMWSH120H28SM4