DMTH10H4M5LPSWQ-13
Diodes Incorporated
- Lifecycle statusActive
- RoHSRoHS compliant
- DescriptionMOSFET BVDSS: 61V~100V POWERDI50
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PDSO-F8
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee3
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal FinishMatte Tin (Sn)
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals8
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)136
- Drain Current-Max (ID) (A)107
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)100
- Feedback Cap-Max (Crss) (pF)25.5
- Operating Temperature-Max (Cel)175
- Operating Temperature-Min (Cel)-55
- Avalanche Energy Rating (Eas) (mJ)240
- Pulsed Drain Current-Max (IDM) (A)428
- Drain-source On Resistance-Max (ohm)0.0049
- Screening Level / Reference StandardAEC-Q101; IATF 16949; MIL-STD-202
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DMTH10H4M5LPSWQ-13