DMN39M1LK3-13 by Diodes Incorporated | Sourcengine

Diodes Incorporated DMN39M1LK3-13

Lifecycle status
Active
RoHS
RoHS compliant
Description
MOSFET BVDSS: 25V~30V TO252 T&R
Category
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-252
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
MATTE TIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
65.7
Drain Current-Max (ID) (A)
89.3
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
30
Feedback Cap-Max (Crss) (pF)
230
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
84
Pulsed Drain Current-Max (IDM) (A)
357
Drain-source On Resistance-Max (ohm)
0.0055
Screening Level / Reference Standard
MIL-STD-202